Strong second-harmonic generation in silicon nitride films
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Tiedostot
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URN:
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http://URN.fi/URN:NBN:fi:tty-201210191319
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Nimeke:
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Strong second-harmonic generation in silicon nitride films |
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Tekijä:
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Ning, Tingyin; Pietarinen, Henna; Hyvärinen, Outi; Simonen, Janne; Genty, Goery; Kauranen, Martti |
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Julkaisun tyyppi:
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Artikkeli - Article |
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Julkaisuaika:
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2012 |
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DOI:
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http://dx.doi.org/10.1063/1.4704159
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Kuvaus:
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Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied Physics Letters vol. 100, issue 16, 1-4 and may be found at http://apl.aip.org/resource/1/applab/v100/i16/p161902_s1. |
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Yliopisto:
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Tampereen teknillinen yliopisto - Tampere University of Technology |
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Tiedekunta:
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Luonnontieteiden ja ympäristötekniikan tiedekunta – Faculty of Science and Environmental Engineering |
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Laitos:
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Optoelektroniikan tutkimuskeskus – Optoelectronics Research Centre
Fysiikan laitos – Department of Physics |
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Tiivistelmä:
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We observe strong second-harmonic generation from silicon nitride films prepared on fused silica substrates by plasma enhanced chemical vapor deposition. The components of the second-order nonlinear optical susceptibility tensor of the films are calibrated against quartz crystal. The dominant component has the magnitude of 2.5 pm/V, almost two orders of magnitude larger than reported for Si3N4, and about three times larger than for the traditional nonlinear crystal of potassium dihydrogen phosphate. The results indicate that silicon nitride has great potential for second-order nonlinear optical devices, especially in on-chip nanophotonics. |
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Tekijänoikeudet:
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This publication is copyrighted. You may download, display and print it for Your own personal use. Commercial use is prohibited. |
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