| Title: | Characterization of deep levels in AlGaInP using deep level transient spectroscopy |
| Author: | Tukiainen, Antti |
| Abstract: | Deep levels in semiconductors, which form due to perturbation in the perfect crystalline structure, are electronic states inside the materials' bandgap.This work deals with characterization of deep levels in (AlxGa1-x)yIn1-yP (AlGaInP) material system using deep level transient spectroscopy (DLTS). Some properties of deep levels are discussed and also the basic theories of two other DLTS related techniques, deep level transient Fourier spectroscopy (DLTFS) and isothermal capacitance transient spectroscopy (ICTS), are presented. /Kir10 |
| Comment: | TTY:n kirjastossa laadittu tiivistelmä |
| Issue date: | 2000-12-13 |
| URN: | http://URN.fi/URN:NBN:fi:tty-200907104558 |
| Publication type: | Diplomityö |
| Language: | eng |
| Pages: | 94 s |
| Examiner: |
Pessa, Markus Rantala, Tapio |
| University: | Tampereen teknillinen korkeakoulu |
| Faculty: | Sähkötekniikan osasto |
| Department: | Fysiikan laitos |
| Degree Programme: |
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