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Modelling og GaN based semiconductor lasers

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Title: Modelling og GaN based semiconductor lasers
Author: Nadir, Mohammed
Abstract: Due to advancement in realizing blue lasers, especially the unique effort of Nakamura during the last years, it became interesting to model the lasers based on GaN. The characterization of semiconductor lasers has been analysed using the software of Crosslight Inc. Along with a brief description of semiconductor lasers and their recently developed potential structures, computer-aided mathematical modelling is hereby demonstrated.AB3:Tutkimuksen tavoitteena oli selvittää LASTIP / PICS3D(tm)-ohjelmiston soveltuvuus laserdiodien laskennallisten ominaisuuksien määrittämiseen ja simuloida tätä ohjelmaa käyttäen GaN -pohjaisia lasereita. Työssä on laskettu GaN/AlGaN/InGaN -kvanttikaivorakenteiden karakteristisia suureita.
Comment: TTY:n kirjastossa laadittu tiivistelmä
Issue date: 1998-12-09
URN: http://URN.fi/URN:NBN:fi:tty-200907104908
Publication type: Lisensiaatintutkimus
Language: eng
Pages: 69 s
Subject: device modellingsemiconductor lasersblue-green emissio
Examiner: Pessa, Markus
University: Tampereen teknillinen korkeakoulu
Faculty: Sähkötekniikan osasto
Department: Fysiikan laitos
Degree Programme:

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